1SS345 diode equivalent, sillicon epitaxial schottky barrier diode.
* Small interterminal capacitance (C=0.45pF typ).
* Low forward voltage and excellent detection efficiency (VF=0.35V max)
* High breakdown voltage (VR=55V). <.
Features
* Small interterminal capacitance (C=0.45pF typ).
* Low forward voltage and excellent detection efficie.
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